Impacts of Temperature and Moisture on the Resistive Switching Characteristics of a Cu-Ta_2O_s-Hasccl Atomic Switch

摘要

The effects of temperature and moisture on the resistive switching characteristics of oxide-based atomic switches were investigated to reveal their switching mechanism. The observed temperature variations of the SET voltages can be qualitatively explained by the classical nucleation theory. The.moisture absorption in oxides results in the formation of a hydrogen-bond network at grain boundaries, and metal ions are likely to migrate along the grain boundaries. Depending on the strength of hydrogen, bonds in oxides, the atomic switches exhibit a different switching behavior to ambient conditions.