Electric-Field-lnduced Al_2O_3/3C-SiC Resistance Memory

摘要

We propose a new nonvolatile resistance device having a metal/Al_2O_3/3C-SiC/n-Si/metal metal-insulator-semiconductor (MIS) structure. It is explained that the electron trapping states are generated in the Al_2O_3/3C-SiC interface region of the 3C-SiC layer due to partial oxidation of the 3C-SiC near the interface, and that the on and off states of the device are caused by trapping and detrapping of electrons in the defect states through the Al_2O_3 layer. The electron capture in the defect states causes high electric-field in the oxide layer which results in high-rate electron tunneling through the oxide layer and lowering the device resistance. We have previously reported the similar memory behavior with a metal/SiO_2/SiO_x/3C-SiC/n-Si/metal MIS structure, however the new memory exhibits more enhanced endurance characteristics than those of the previous memory, where the trapped electrons are injected and ejected through the 3C-SiC layer.