Current Transport in CuInS_2 solar Cells Depending on Absorber Preparation

摘要

According to our model for the current transport in CuInS_2/CdS/ZnO solar cells presented previously, the dominant recombination under illumination occurs at the CuInS_2/CdS interface. In this contribution we expand this model for cells where the absorber has been prepared in different sequential processes by using results from jV curve measurements performed at varied temperature and illumination. We find that in contrast to CuInS_2 and GuGaSe_2 solar cells from the Angstrom Solar Center the CuInS_2 cells exhibit a qualitative change in the dominant recombination mechanism between the dark and under illumination. The dominant recombination mechanism under illumination appears to be affected by absorber preparation parameters.