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The Influence of the Semiconducting Properties of Passive Films on Localized Corrosion Rates

机译:无源膜半导体特性对局部腐蚀速率的影响

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A passive film with a high electrical resistance can lead to a small cathodic current and repassivation of metastable pits and crevices. Many passive films behave as semiconductors and cathodic current magnitudes can be related to the semiconducting properties of the films. In this study, Alloy C22 was investigated with Mott-Schottky (MS) tests in neutral and acidic solutions. The passive film forming on Alloy C22 was found to be n-type with measured charge carrier densities and flatband potentials that were frequency dependent. An expression developed by Brug et al.(1) was found to calculate flatband potentials consistent with polarization scans. Using this expression the charge carrier density was calculated to be 10{sup}21cm{sup}(-3) and the flatband potential was found to be pH dependent, but close to the hydrogen redox couple. Alloy's C22's low flatband potential may increase its resistance to stable localized corrosion in ambient environments.
机译:具有高电阻的无源膜可以导致小的阴极电流和亚稳态坑和裂缝的重新分配。许多被动薄膜的表现为半导体和阴极电流幅度可以与薄膜的半导体性质有关。在该研究中,用中性和酸性溶液中的Mott-Schottky(MS)试验研究了合金C22。在合金C22上形成的被动膜形成为n型,具有测量的电荷载体密度和频率依赖性的扁平带电位。通过Brug等人开发的表达。(1)被发现计算与极化扫描一致的流带电位。使用该表达,计算电荷载体密度为10 {sup} 21cm {sup}( - 3),并且发现平带电位依赖于pH依赖性,而是靠近氢氧还原耦合。合金的C22的低流带电位可能会增加其在环境环境中对稳定的局部腐蚀的抵抗力。

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