Electrodeposition of Semiconductor n-CdTe and p-CdTe in Aqueous Medium and Aluminum metal in a Nonaqueous Medium

摘要

Both n-type and p- type semiconductor CdTe were synthesized by electrodeposition from an aqueous deposition bath. Electrodeposition potential was found to be the key factor to synthesize the CdTe semiconductor of any specific conductivity type. The electrodeposition potentials of -0.4 V and 0.4 V versus Ag/AgCl generated the p-type and n-type CdTe respectively. The optimum deposition time was found to be 90 minutes for the best photoresponce of CdTe during water-splitting reaction. The indirect band gap energy of CdTe was found tunable from 1.55 to 2.00 eV by controlling both electrodeposition potential and the annealing time. Crystalline aluminum metal was deposited on a platinum electrode tip at room temperature in a non-aqueous deposition bath of anhydrous toluene containing aluminum bromide and the supporting electrolyte, tetra butyle ammonium bromide. Anhydrous condition was found to be the critical factor for the success of electrodeposition and production of aluminum metal at room temperature in a non-aqueous deposition bath.