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Electrochemical Properties of Cu Deposition from Methanesulphonate Electrolytes for ULSI and MEMS Applications

机译:Ulsi和MEMS应用中甲磺酸电解质Cu沉积的电化学性能

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Methanesulphonic acid (MSA) is an alternative to sulphuric acid electrolytes. The electrochemical nucleation and growth of Cu on a glassy carbon (GC) electrode was studied from the methanesulphonate and sulphate baths. The overpotential for Cu deposition was much smaller in the MSA bath compared to the traditional sulphuric acid bath. Cu nucleation occurred at a higher rate in the MSA bath. The measured diffusion coefficient value for Cu deposition from the MSA bath was 6.82 × 10~(-6) cm~2/s. The UV-Vis spectroscopic results confirmed that the coordination of Cu species was the same in both electrolytes. Cu electrodeposition on Ni sputtered Si substrate from the high efficiency MSA bath was found to be photoresist compatible with no void formation. ID Cu nanorods were also deposited through AAO template on a Ni evaporated seed layer substrate showing potential applications as interconnects in ULSI and MEMS.
机译:甲磺酸(MSA)是硫酸电解质的替代方案。从甲磺酸盐和硫酸盐浴中研究了玻碳碳(GC)电极上Cu的电化学成核和生长。与传统的硫酸浴相比,MSA浴中Cu沉积的过电位较小。 Cu成核在MSA浴中以更高的速率发生。来自MSA浴的Cu沉积的测量的扩散系数值为6.82×10〜(-6)cm〜2 / s。 UV-Vis光谱结果证实,两种电解质中Cu物种的配位相同。发现来自高效率MSA浴的Ni溅射Si衬底上的Cu电沉积是光致抗蚀剂,其不具有空隙形成。 ID Cu Nanorods还通过AaO模板上沉积在Ni蒸发的种子层基板上,显示潜在应用作为ULSI和MEMS中的互连。

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