Process analysis and modeling of thin silicon film deposition by hot-wire chemical vapor deposition

摘要

A quantitative model of the Hot-wire Chemical Vapor Deposition of thin silicon films from pure silane (SiH_4) is described and its results compared with experimental data. The model embodies both the flow characteristics in the reactor and the reaction kinetics. Predicted results of the silane conversion and growth rate as a function of the residence time, pressure and wire temperature are in reasonable agreement with experimental data. Although the predictive scope of the model does not include film structure, model results of the gas phase chemistry indirectly point to a dependence of the film crystalline fraction on the ratio of the atomic hydrogen flux and the total silane radical flux.