Multiple atomic configurations of inversion domain boundaries in GaN grown on (111)Si

摘要

Inversion domains inside GaN layers grown on (111)Si by molecular beam epitaxy have been investigated by transmission electron microscopy. High resolution electron microscopy analysis of their boundaries revealed that two atomic configurations coexist inside these layers. An explanation may be the observed interaction between these domains and basal stacking faults. It is shown that they are directly connected to the substrate surface without any intermediate amorphous layer.