Effect of the alpha-particle irradiation on the photoluminescence and Raman spectroscopy from GaAs/Alo_(0.3)Gao_(0.7)As quantum wells and coupling coefficients for the light and heavy holes

摘要

The epitaxial grown GaAs quantum wells (QWs) (with the width L_1 = 2.5 nm and L_2 = 15 nm) were subjected to alpha-particle irradiation at the doses (7.8 X 10~(12) - 3.4 X 10~(13)) cm~(-2). The response of the QWs was studied by means of the low temperature photoluminescence (PL) and inelastic light spectroscopy. The damage accumulation leads to a shift of the quasiparticle energy level towards higher energy and to a decrease of the LO_1 and LO_2 modes and to an increase of the T0_2 frequency mode of the Al_(0.3)Ga_(0.7)As slabs.