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A new actuation structure for the deformation of continuous mirrors for adaptive optics

机译:用于自适应光学元件的连续镜变形的新致动结构

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This work demonstrates a novel technique for the realization and the actuation of continuous-membrane for adaptive optic applications. This original device exhibits, for the first time, both positive and negative membrane deflection with individual pixel displacement of +/- 10 μm, which is one order of magnitude larger than usual approaches., without diffractive interference. The principle of the device relies on an array of actuators which allow a pixel based motion of the continuous mirror. These actuators are torsional electrostatic plates suspended 90 μm above the substrate which can achieve large angle deflection, up to 15°when underneath electrodes are biased. The fabrication is based on a self-assembling polysilicon process : the 3D structures are lifted up by the buckling of the supporting beams induced by scratch-drive actuation (SDA). The 3D structures are locked to mechanical anchors, and then an Au/SiO_2/Si_3N_4 membrane is fixed above these actuators thanks to spacer made out of thinned silicon wafer. The spacer thickness is determined to ensure a good mechanical contact between the membrane and the actuators. Once the voltage is applied to the buried actuation electrodes, lifted polysilicon plates rotate by electrostatic actuation, and thus, the mechanical coupling makes the membrane deflect above its zero-plane. This concept was experimentally validated using a reflecting Au/SiO_2/Si_3N_4 membrane, and a 5 μm-thick translucent plastic film reported an a 25 mm~2 KOH-etched silicon stand. Using visible-light optical tools, deformation of the membrane was demonstrated, with positive deflection up to 10 μm for an actuation voltage of 200V.
机译:这项工作展示了一种用于实现和致动用于自适应光学应用的连续膜的新颖技术。这款原始装置首次展示了正面和负膜偏转,具有+/-10μm的单个像素位移,这是比通常的方法大的一个数量级。,没有衍射干扰。该装置的原理依赖于允许基于像素的连续镜的运动器阵列。这些致动器是旋转静电板悬浮在基板上方的90μm,该基板可以实现大的角度偏转,当在电极下方偏置时最多15°。制造基于自组装多晶硅处理:通过刮擦驱动致动(SDA)引起的支撑梁的屈曲来提升3D结构。 3D结构被锁定到机械锚,然后通过由薄的硅晶片制成的间隔物固定在这些致动器上方的Au / SiO_2 / Si_3N_4膜。确定间隔厚度以确保膜和致动器之间的良好机械接触。一旦将电压施加到掩埋的致动电极,就通过静电致动旋转的多晶硅板旋转,因此,机械耦合使膜偏转在其零平面上方。使用反射Au / SiO_2 / Si_3N_4膜进行实验验证了该概念,并且5μm厚的半透明塑料膜报道了一个25mm〜2的koh蚀刻硅架。使用可见光的光学工具,对膜的变形进行说明,正偏转高达10μm的致动电压为200V。

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