Fin Width Variation Effects on Program Disturbance Characteristics in a NAND Type Bulk Fin SONOS Flash Memory

摘要

For the mass storage flash memory, highly scalable device structure should be adopted. As a promising candidate, bulk FinFET SONOS flash memory device has been introduced and reported [1]. Fig. 1 shows the schematic 3-dimentional view of the bulk fin SONOS flash memory device. Fin width is an extra device parameter which is not included in planar device. Effects of fin width on program and erase speed were presented by in previous works [1]. In this study, we report program disturbance characteristics with fin width variation in a NAND type bulk fin SONOS flash memory.