A non-isothermal circuit is proposed in this work for SOI MOSFETs, derived from a previously developed steady-state SOI heat flow model [1]. The heat flow model was developed from the heat flow equation in SOI structure accounting for the non-isothermal profile on the Si island, heat loss to BOX and heat flow to FOX and metal contacts. The model is represented by an N×N matrix equation describing the conservation of heat flow in the SOI structure, where N denotes the number of temperature nodes on the Si island [1]. The proposed thermal circuit is given in Fig. 1(a) that provides identical heat flow paths with those in the 7-node heat flow model. The node equations of the circuit in Fig. 1(a) therefore leads to a 7×7 matrix equation equivalent to that in the 7-node heat flow model given in Eq. (11) of [1]. Thermal resistances in Fig. 1(a) can therefore be determined from the node equations of the thermal circuit in Fig. 1(a) and Eq. (11) in [1]. The 5-node and 3-node thermal circuits can also be constructed in a similar way to match the 5×5 and 3×3 matrix equations given in Eq. (16) and (20) of [1] for the 5-node and 3-node heat flow models, respectively.
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