A Novel SONOS Nonvolatile Flash Memory Device Using Hot Hole Injection for Write and Tunneling to/from Gate for Erase

摘要

Localized charge-trapping devices based on polysilicon-oxide-nitride-oxide-silicon (SONOS) structures are appealing for nonvolatile memories beyond the floating gate technology, due to their integration with standard CMOS technology, low-voltage programming, immunity to erratic charge loss and capability of 2-bit/transistor storage. However, the utilization of channel-hot-electron (CHE) injection and hot-hole injection (HHI) in NROM technology [1] raises a concern on endurance.