A Study of Interface Charges on the Operation of 4H Silicon Carbide Static (SiC) Static Induction Transistors (SITs)

摘要

Recently, there has been interest in SiC devices for advanced system applications. SiC Schottky diodes [1] have been introduced to overcome minority carrier storage effects in Silicon PIN diodes. SiC Schottky diodes may be used as 'flyback' diodes in inductive load applications. SiC MOSFETs and their derivatives, such as DMOS devices [2], offer considerable advantages for applications in variable-frequency motor applications.