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TRANSPORT AND NOISE IN MULTI-TERMINAL DIFFUSIVE CONDUCTORS

机译:多终端扩散导线中的运输和噪声

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Shot-noise induced by current or voltage fluctuations in electron transport is a striking manifestation of charge quantization (for a review, see). It serves as a sensitive tool to study correlations in conductors: while shot-noise assumes a maximum value (with Poissonian distribution) in the absence of correlations, it becomes suppressed when correlations set in as e.g. imposed by the Pauli principle. In diffusive mesoscopic two-terminal conductors where the inelastic scattering lengths exceed the system size the shot-noise suppression factor was predicted to be 1/3. The 1/3-suppression of shot-noise in diffusive conductors is now experimentally confirmed. While some derivations are based on a scattering matrix approach and thus a priori include quantum phase coherence, no such effects are included in the semiclassical Boltzmann-Langevin equation approach, which nevertheless leads to the same result. However, while in the quantum approach for a two-terminal conductor the factor 1/3 was even shown to be universal, the semiclassical derivations given so far are restricted to quasi-one-dimensional conductors. We present here the theory of transport and noise in multiterminal diffusive conductors. This problem has been recently addressed by Blanter and Buettiker in Ref. where they use the scattering matrix formulation followed by an impurity averaging procedure. Having the advantage of including quantum phase coherence, this approach is somewhat cumbersome to generalize to an arbitrary geometry and arbitrary disorder. In contrast to this, our approach is based on a semiclassical Boltzmann-Langevin equation, which greatly simplifies the calculations. In Section 2. we formulate hte problem and give a formal solution of it, while in Section 3. we present some applications of our theory.
机译:电子传输电流或电压波动引起的射击噪声是充电量化的醒目表现(用于评论,见)。它用作在导体中研究相关性的敏感工具:虽然在没有相关性的情况下,射门噪声假定最大值(随着泊松分布),但是当相关的相关时,它变得抑制如例如。保利原则施加。在漫射型介面散射长度超过系统尺寸的脱模双端导体中预测射击噪声抑制因子是1/3。现在通过实验证实了漫射导体中的射击噪声的1/3抑制。虽然一些衍生是基于散射矩阵方法,因此先验包括量子相干关系,但是在半透明的Boltzmann-Langevin等式方法中没有包括这种效果,这然而导致相同的结果。然而,虽然在两个端子导体的量子方法中,因子1/3甚至被证明是通用的,但到目前为止给出的半透明衍生限制为准一维导体。我们在这里介绍了多晶片扩散导体的运输和噪声理论。最近在Ref的Blaner和Buettiker解决了这个问题。在那里他们使用散射基质制剂,然后使用杂质平均程序。具有包括量子相干性的优点,这种方法有些繁琐地概括到任意几何和任意疾病。与此相反,我们的方法是基于半透明的Boltzmann-langevin等式,这大大简化了计算。在第2节中我们制定了HTE问题并提供了正式的解决方案,而在第3节中。我们展示了我们理论的一些应用。

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