Formation of metallic nanoclusters in SiC by MeV ion implantation

摘要

We present the results of our investigation of producing nanoclusters of gold,silver, copper and tin in 6H-SiC. This is accomplished by implanting 1.0 MeV Au, 2.0 MeV Ag, 2.0 MeV Cu, and 160 keV Sn into the Si face of siC at room or elevated temperature followed by annealing at various temperatures. Using optical absorption spectrophotometry, we determined the location of the absorption band for each metal nanocluster in SiC. Elevated temperature implantation reduces optical absorption due to ion implantation induced defects. Using the Mie theory, we determined the index of refraction in the implanted volume.