Photoconductivity and photoluminescence of amorphous carbon nitride a-CN_x films prepared by the layer-by-layer method

摘要

Amorphous carbon nitride films a-CN_x which made in our laboratory, show high photosensitivity P_s that is a ratio of photoconductivity sigma p and dark-electrical conductivity sigma _d Maximum P_s of a-CN_x is about 5x10~6 which is about 50 times larger than that of hydrogenated amorphous silicon a-Si:H.