A novel method, called random telegraphy signal (RTS), was constructed to characterize the gate oxide quality and reliability of metal-oxide-semiconductor field-effect-transistors (MOSFETs). With the aggressive scaling of device size, drain current RTS (I_D-RTS) become a critical role in carrier transport of MOSFETs. Besides, RTS in gate leakage current (I_G-RTS) was denoted as the other new method to understand property of gate oxide. Recently, the study of RTS has also been made in MOSFETs with metal gate and high dielectric constant (metal gate/high-k). However, the RTS in partial depleted silicon-on-insulator MOSFETs (PD SOI MOSFETs) has not comprehensively been studied yet. This paper investigates RTS characteristics in PD SOI MOSFETs.
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机译：构造一种称为随机电报信号（RTS）的新方法，以表征金属氧化物 - 半导体场效应晶体管（MOSFET）的栅极氧化物质量和可靠性。随着器件尺寸的激进缩放，漏极电流RTS（I_D-RTS）成为MOSFET的载波运输中的关键作用。此外，栅极漏电流（I_G-RTS）中的RTS表示为其他新方法，以了解栅极氧化物的特性。最近，还在MOSFET中进行了RTS的研究，具有金属栅极和高介电常数（金属栅/高k）。然而，局部耗尽的绝缘体MOSFET（PD SOI MOSFET）中的RTS尚未综合地研究。本文研究了PD SOI MOSFET中的RTS特性。
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