Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan, R. O. C.;
Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan, R. O. C.;
Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan, R. O. C.;
Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan, R. O. C.;
Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan, R. O. C.;
Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan, R. O. C.;
Device Department, United Microelectronics Corporation, Tainan Science Park, Taiwan, R. O. C.;
Device Department, United Microelectronics Corporation, Tainan Science Park, Taiwan, R. O. C.;
机译:n沟道MOSFET中度反转中随机电报信号分析的横向陷阱位置研究
机译:累积模式SOI / nMOSFET中的随机电报信号
机译:通过分析n-MOSFET中的三电平随机电报信号确定横向陷阱位置的定位区域的方法
机译:用PD SOI MOSFET调查随机电报信号
机译:使用随机电报信号进行半导体/栅极介电缺陷的测量,建模和仿真。
机译:泄漏电流非均匀性和随机电报信号在CMOS图像传感器浮动扩散中用于贴上像素的电荷存储器
机译:MOSFET中随机电报信号噪声的大信号激励测量技术