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A NOTE ON CONTROLLING THE HOMOGENEITY OF OXIDE LAYERS

机译:关于控制氧化物层均匀性的注释

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The paper deals with the problem of the control of the homogeneity of oxide layers. In a first step, a precise definition of what is to be understood by the term homogeneity will be given. It is then shown that the use "Standard-SPC", i.e. the use of a "Shewart-Charts" for the arithmetic mean and the sample standard deviation, is not an appropriate approach for the control of homogeneity, as it does not take into account the three (technically unavoidable) violations to the i.i.d.-presumption that have to be dealt with when one considers random variables on a wafer: these will generally differ in their mean and in their variance; moreover, they will not be independent. A formula will be presented to point out the effects that these violations will have on the expectation of thed sample standard deviation, which is generally considered to be a measure for homogeneity. Finally, a modified approach for the control of homogeneity in a more efficient way will be presented.
机译:本文涉及控制氧化物层的均匀性的问题。在第一步中,将给出术语均匀性应理解的内容的精确定义。然后显示使用“标准SPC”,即使用“棚鞘 - 图表”用于算术平均值和样本标准偏差,是控制均匀性的适当方法,因为它没有进入考虑到IID推测的三个(技术上不可避免的)违规,必须处理晶片上的随机变量:这些通常在其均值和方差中不同;而且,他们不会独立。将提出公式以指出这些违规对样本标准偏差预期的影响,这通常被认为是均匀性的衡量标准。最后,将呈现以更有效的方式控制均匀性的修改方法。

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