PREPARATION OF CU THIN FILMS BY MOCVD USING NOVEL ORGANOMETALLIC CU(II) PRECURSORS

机译：使用新型有机金属Cu（II）前体的MOCVD制备Cu薄膜

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Copper metal has attracted interest considerably as an alternative interconnecting metal to Al alloys for multilevel metallization applications in ULSI technology (1-3) because of its excellent electrical conductivity and high resistance to electromigration.

机译：由于其优异的导电性和高抗电迁移，因此铜金属作为替代的互连金属作为替代的互连金属，作为用于ULSI技术（1-3）的多级金属化应用的替代金属。

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《The Meeting of the Electrochemical Society》|2003年||共1页
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Chang G.Kim; Jung Woo Park; Taek-Mo Chung; Sun Sook Lee; Yunsoo Kim;
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机译：Cu_（0.8）Ga_（0.2）和In_2Se_3前体膜的硒化制备Cu（In，Ga）Se_2薄膜及表征
2. Preparation and Characterization of Cu(In,Ga)Se2Thin Films by Selenization of Cu0.8Ga0.2and In2Se3Precursor Films [J] . JiangLiu, Da-MingZhuang, Ming-JieCao, International Journal of Photoenergy . 2012,第1期

机译：Cu0.8Ga0.2和In2Se3前体薄膜的硒化制备Cu（In，Ga）Se2薄膜
3. Preparation of Copper(Cu) Thin Films by MOCVD and Their Conversion to Copper Selenide (CuSe) Thin Films through Selenium Vapor Deposition [J] . Dong Hee Kang, Han-Cheol Jeong, Hee Min Yoo, Bulletin of the Korean Chemical Society . 2003,第5期

机译：MOCVD制备铜（Cu）薄膜并通过硒气相沉积将其转化为硒化铜（CuSe）薄膜
4. PREPARATION OF CU THIN FILMS BY MOCVD USING NOVEL ORGANOMETALLIC CU(II) PRECURSORS [C] . Chang G.Kim, Jung Woo Park, Taek-Mo Chung, The Meeting of the Electrochemical Society . 2003

机译：使用新型有机金属Cu（II）前体的MOCVD制备Cu薄膜
5. SUPERCONDUCTING PROPERTIES OF EPITAXIAL YBa2Cu3O7-8 THIN FILMS AND YBa2Cu3O7-8/PrBa2Cu3O7-8 HETEROSTRUCTURES GROWN BY PULSED LASER DEPOSITION [D] . Inam, Arun. 1992

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PREPARATION OF CU THIN FILMS BY MOCVD USING NOVEL ORGANOMETALLIC CU(II) PRECURSORS

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