Application of XRF Spectrometry in Characterization of High-k Ultra-Thin Films

摘要

XRF is a fast,cheap and nondestructive technique suitable to the chemical analysis of thin films.Another advantage of using XRF lies in the possibility of detection of Al-containing thin layers on Si-wafers.With Rutherford Backscattering,Al peak can not be separated from that of Si substrate.One challenge for XRF of ultra-thin layers is the sensitivity.In this work,the feasibility of using a wavelength dispersive XRF to study the nanometer thick high-k oxide layers is proven.