Analytical Approximations for the Distributions of Substitutional Transition Metal Defects in Silicon Float Zone Crystals

摘要

In previous work /1,2/ it was reported about the distributions of substitutional transition metal (TM) defects in silicon.These investigations were performed on 0.8 inch FZ crystals grown with the velocity V=3.4 mm/min,where the metal doping was incorporated during crystal growth.Respecting several features of the dopants,it was suitable to distinguish between the groups Cu,Ni,Co,Ag,Pd (I) and Rh,Au,Pt,IT (II).