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Ionic Conductivity Of Semiconductor Ceramics AgGeAsS_3 at Super High Pressures 15GPa-50GPa

机译：半导体陶瓷AGGEEASS_3在超高压下的离子电导率15GPA-50GPa

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The ionic semiconductor AgGeAsS_3 was synthesized in amorphous and polycrystalline forms [l]-[5] and at temperatures 273K has practically 100% ionic conductivity with Ag ions as transport agent.We researched now the influence of static pressure on electrical characteristic of this sample at temperature 300K.The super pressure was created by means of camera plane-cones type made of synthetic carbonado-diamonds with pressure to 50GPa.

机译：离子半导体AGGEEASS_3以无定形的和多晶形式合成[L] - [5]，在温度下，273K在273K处与转运剂具有Ag离子的20％的离子电导率。我们现在研究了静压对该样品的电气特性的影响温度300K。通过摄像机平面型通过具有压力至50gPa的合成碳纳达型 - 金刚石制成的相机平面锥体产生超级压力。

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《The Meeting of the Electrochemical Society 》|2001年||共1页
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Babushkin A.N; Bolkova Ya.Yu.; Kobeleva O.L;
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7. Ionic Conductivity Of Semiconductor Ceramics AgGeAsS_3 at Super High Pressures 15GPa-50GPa [C] . Babushkin A.N, Bolkova Ya.Yu., Kobeleva O.L The Meeting of the Electrochemical Society . 2001

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Ionic Conductivity Of Semiconductor Ceramics AgGeAsS_3 at Super High Pressures 15GPa-50GPa

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