First-Principles-Based Modeling of Surface Reactivity and Growth Kinetics for Vapor Deposition Processes

摘要

Vapor deposition is used to produce a wealth; of different materials used in the microelectronics industry and elsewhere. Material properties and device performance are critically tied to the atomic surface structure and composition that form under processing conditions. Great strides have been made in understanding some of the physical processes such as deposition and diffusion that control growth. Much less, however, is known surface chemistry and reactivity. The ability to monitor surface structure, composition and reactivity in a growing film is, at best, extremely difficult. Much of what is known about the mechanisms for growth have been established through empirical routes.