Electrochemical Atomic-Layer Epitaxy:Electrodeposition of InAs and InSb

摘要

Electrochemical atomic-layer epitaxy (EC-ALE) is an approach to electrodepositing thin-films of compound semiconductors.It takes advantage of underpotential deposition (UPD),deposition of a surface limited amount (a monolayer or less) of an element at a potential less negative than bulk deposition,to form a thin-film of a compound-one atomic layer at a time.Ideally,the 2-D growth mode should promote epitaxial deposition.