Thermal wave analysis: a tool for non-invasive testing in inon beam synthesis of wide band gap materials

摘要

Photothermal methods provide a valuable complement to the destructive measurement techniques for the detection of the potimal process conditions in ion beam synthesis of wide band gap semiconductor compounds.In addition to their nondestructive and non contact qualities,they are highly sensitive to changes of thermophysical properties due to structural changes.Analyses have been carried out with (SiC)_1-x(AlN)x compounds,formed by ion beam synthesis.