The Effect of Gate Geometry on the Charging Characteristics of Metal Nanocrystal Memories

摘要

This study presents the effect of gate geometry on the charging characteristics of metal nanocrystal memories. The effect is studied by varying the perimeter to area ratio, number of convex corners and concave comers of the gate of a metal-oxide-semiconductor (MOS) capacitor with embedded gold nanocrystals. It can be observed that the nanocrystal charging rate increases for a smaller perimeter to area ratio. The presence of concave and convex comers increases the nanocrystal charging rate. Based on this study it is expected thai gate geometries with low perimeter to area ratio and with selected convex and concave corners would increase the nanocrystal charging rate.