Characterization of cubic GaN films using an AlN/GaN ordered alloy on GaAs (100) by RF-MBE

摘要

High quality cubic GaN films were successfully grown on an AlN/GaN ordered alloy by RF-MBE.AlN/GaN ordered alloy is here employed instead of a AlGaN nucleation layer formed by nitridation of an AlGaAs buffer layer.Dominant cubic GaN epilayer (1.0 mum) growth was confirmed by insitu RHEED observations,AFM,TEM,PL and X-ray diffraction measurements.