Si and InSb were subject to depth sensing multi-cycling nanoindentation. The load-depth-curves exhibited hysteresis loops which are explained in terms of pressure induced phase transformations. In order to study the impact of crystal distortions on phase transformation, the specimens were subject to boron implantation (ion energy 180 keV) of different implantation doses (10~(14) to 10~(17) ions/cm~2) and indented without annealing. In InSb, the hysteresis loops disappeared after implantation of 10~(16) ions/cm~2, and for Si with its stronger bonds, a dose of 3 * 10~(16)/cm~2 is required for the same effect. Indentation cycling with constant maximum load results in a sudden disappearance of the hysteresis loop after a small gradual loop area reduction during the first initial cycles.
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