We earlier reported the measured decrease of electrical resistivity during isochronal-annealing of ion irradiation damage that was accumulated at low-temperature (10 or 20K), and the temperature dependence of the resistance of defect-populations produced by low-temperature damage-accumulation and annealing in a stabilized 5-phase plutonium alloy, Pu(3.3 at%Ga)[l]. We noted that the temperature dependence of the resistance of defects resulting from low-temperature damage accumulation and subsequent annealing exhibits a -ln(T) temperature dependence suggestive of a Kondo impurity. A discussion of a possible "structure-property" effect, as it might relate to the nature of the 8-phase of Pu, is presented.
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