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ELECTRIC AND MAGNETIC PROPERTIES OF EPITAXIAL Fe_(2-x)Ti_xO_(3+delta)FILMS

机译:外延Fe_(2-x)Ti_xo_(3 + delta)薄膜的电和磁性

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Solid solution films of the alpha-Fe2O3-FeTiO3 series are one of the candidates for noble half-metallic oxides. They were epitaxially formed on alpha-Al2O3(001) single crystalline substrates by O2-reactive evaporation method. The Fe_(2_x)Ti-xO_(3+delta) films prepared at higher T_S=973 K and with larger Ti content x>=0.4 had the ilmenite structure with R3 symmetry. Other films at lower T_s or with smaller x possessed the corundum structure with R3c. Only the films with R3 symmetry had large ferrimagnetic moments, though the observed spontaneous magnetization was less than half of the ideal value expected from the fully ordered structure. Room temperature resistivity of intermediate composites dropped to 10~(_1)OMEGA cm due to the formation of the mixed valence states between Fe~(2+) and Fe~(3+). However the Fe~(2+) content of the films was rather small as compared with stoichiometric Fe_(2_x)Ti_xO3. The Ti-rich films had large oxygen nonstoichiometry of about delta=0.3.
机译:Alpha-Fe2O3-FetiO3系列的固溶膜是贵族半金属氧化物的候选物之一。通过O 2反应蒸发方法在α-Al 2 O 3(001)单晶基质上外延形成它们。在较高的T_S = 973k和较大的Ti含量x> = 0.4处制备的Fe_(2_x)Ti-XO_(3 +Δ)膜具有具有R3对称性的Ilmenite结构。较低T_S或较小X处的其他薄膜具有R3C的刚玉结构。只有具有R3对称的薄膜具有大的亚铁磁性矩,尽管观察到的自发磁化低于完全有序结构所期望的理想值的一半。由于Fe〜(2+)和Fe〜(3+)之间的混合价态形成,中间复合材料的室温电阻率降至10〜(_1)ωcm。然而,与化学计量Fe_(2_X)Ti_XO3相比,薄膜的Fe〜(2+)含量相当小。富含Ti的薄膜具有约Delta = 0.3的大氧非计量术。

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