Investigation of deep levels in vanadium-doped CdTe and CdZnTe

摘要

Deep levels in vanadium-doped CdTe and CdZnTe crystals grown by vertical Bridgman for photorefractive applications are reviewed. Based on photo-induced current transient spectroscopy, deep-level transient spectroscopy and deep-level optical spectroscopy, deep traps are identified and their electrical and optical properties are characterized. A discussion about their origin and a comparison with results obtained by other spectroscopy techniques are given. direct c 1999 Elsevier Science B.V. All rights reserved.