Generation-recombination noise and photo-induced transient conductivity in epitaxial CdHgTe long wavelength infrared detectors

摘要

Measurements are described of I-V characteristics, resistance versus T~-1, noise and photoresponse for frequencies of 10 Hz to 1 MHz in the temperature range 300-50 K for cadmium-mercury telluride long-wavelength infrared detectors having 1#mu# epitaxial layers on wide band gap material. The noise consists of 1/f noise and one or two Lorentzians, attributed to shallow hole traps, probably associated with Hg vacancies. The results are discussed and analyzed after a brief resume of g-r noise. The PICTS response curves are attributed to tunneling to interface states. direct c 1999 Elsevier Science B.V. All rights reserved.