Large-grained polycrystalline silicon on glass by copper vapor laser annealing

摘要

We crystallized 400 nm thick amorphous silicon films on low cost glass substrates using a pulsed copper vapor laser. The moderate pulse energy (60 μJ) and high repetition rate (20 kHz) of the laser allow crystallization scanning rates up to 10 mm/s. The resulting polycrystalline silicon films show large elongated grains 3 μm wide and several tens of microns in length.