Effect of shallow donors induced by hydrogen on P~+N junctions

摘要

We have evaluated the effect of shallow donors induced by proton irradiation on P~+N junctions. We have combined the capacitance-voltage (C-V) technique, which provides the shallow donor profile, and a numerical simulation, based on the solution of Poisson's equation, to determine the electric field as a function of depth in the N region. This procedure can be applied to study the breakdown voltage of P~+N junctions as a function of proton irradiation, i.e. its energy and dose. direct c 1999 Elsevier Science S.A. All rights reserved.