Hydrogen-Induced Shallow Donors in Silicon and Silicon-on-Insulator Structures Formed by Hydrogen Slicing

摘要

The method of hydrogen slicing is studied in the details from the point of view electrically active defect formation. It is shown that 400 - 500 ℃ thermal treatments needed for SOI production lead to the hydrogen-defect induced shallow donor (HDD) creation in Si and SOI. It is shown also that double implantation of hydrogen and helium ions allows to diminish not only the critical dose needed for layer transfer but also shallow donor concentration. A decrease in HDD concentration is connected with vacancy supersaturation in the case of H and He coimplantation opposite to high hydrostatic pressure (HP) annealing up to 1.5 Gpa. It was shown previously that HP annealing enhances HDD formation. Possible microscopic structure of HDD is discussed.