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Two level, in-band/out-of-band modelling RF interference effects in integrated circuits and electronic systems

机译:在集成电路和电子系统中的两个级别,带内/带外建模RF干扰效应

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摘要

In this paper we present a new behavioural model that combines high frequency and low frequency subcircuits to predict the effect of Radio Frequency Interference (RFI) on linear integrated circuits. The model is constructed from measured andmanufacturers data, and can determine the failure mechanisms in analogue systems subjected to RFI. The results of measurements and simulations of circuits containing one and two op-amps demonstrate the principle of the model.
机译:在本文中,我们提出了一种新的行为模型,它结合了高频和低频子通量来预测射频干扰(RFI)对线性集成电路的影响。该模型由测量的和制造商数据构成,并且可以确定经过RFI的模拟系统中的故障机制。含有一个和两个OP-AMPS的电路的测量和模拟结果证明了该模型的原理。

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