Suppression of temperature sensitivity of interband emission energy by an InGaAs overgrowth on self-assembled InGaAs/GaAs quantum dots

摘要

Lasing wavelength of semiconductor lasers changes greatly as a function of temperature, primarily due to the temperature-induced change in the band gap of active region. This phenomenon being thought to be inherent to semi-conductor lasers, is a serious drawback in lasers that work in optical transition systems where the lasing wavelength should be strictly controlled. In this work, we report that the temperature dependence of emission energy can be greatly reduced in self-assembled InGaAs/GaAs quantum dots by an overgrowth of an In{sub}xGa{sub}(1-x)As (x ≥ 0.25) layer. Energy shift was less than half of bulk GaAs between 4.2 K and 200K when x=0.3.