In [19] was drawn optimum, from authors point of view, technological scheme for SiC high power diodes producing, substrates ( grown by Lely method) + n-type epilayres with low doped region on the top ( CVD) + p-type ( SE or implantation) + low resistance ohmic contacts(on base of the metals with high melting temperature, which can be simultaneously as a mask for plasma-ion etching) + mesa formation with profiling (plasma-ion etching) + surface protection ( dielectric with critical electric field strength more than same for air) + packaging in metal-ceramic packages. Results, described in this paper allowed to draw such scheme for producing some other SiC devices (Table 4).
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