Comparison of AlN films synthesized by pulsed laser ablation and magnetron sputtering techniques

摘要

A comparative study is reported on the aluminum nitride (AlN) films on Si(111) substrate deposited by pulsed laser deposition and reactive magnetron sputtering. The structure, bonding characteristics, relative impurity levels, and wear resistance have been investigated to compare these films. We have used the techniques such as high resolution transmission electron microscopy, Raman spectroscopy, fourier transform infra-red spectroscopy, secondary ion mass spectrometry, and crater grinding method for wear test, to delineate differences between these AlN films.