Computer simulation of stress distribution in amorphous SiO_2 thin films

摘要

A molecular dynamics simulation of amorphous SiO_2 thin films has been made to investigate the structure and internal stress. The atomic configuration of the amorphous structure is investigated through the radial distribution function and the distribution of Si-O-Si bond angles. Distribution of internal stress through the specimen is evaluated from the volume and the shape of the SiO_4 tetrahedron, which is the elementally unit of amorphous SiO_2.