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Imporved tribological behavior of boron-implanted Ti-6Al-4V

机译:改善硼植入的Ti-6Al-4V的摩擦学行为

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Previous research has compared the mechanical properties of Ti6Al4V implanted with nitrogen using the plasma source ion immersion process and Ti6Al4V implanted with boron using the beamline process [1]. Although the nitrogen implanted Ti6Al4V had superior wear resistance it was concluded that the wear resistance of boron implanted Ti6Al4V might be improved to compareable levels if boron were implanted at lower energies to increase the concentration of boron at the surface. Boron implantation of Ti6Al4V has been conducted at combinations of 32 and 40 keV to supplement that done previously at 75 keV. Shallower boron depth profiles with higher B-concentrations in the Ti64 surface have been obtained by tailoring the combinations of ion energy and dose. This work used three different ion energy and dose combinations of 4x10~(17) B-at/cm~2 at 40 keV plus 2x10~(17) B-at/cm~2 at 32 keV, 4X10~(17) B-at/cm~2 at 40keV, and 4X10~(17) B-at/cm~2 at 32 keV plus 2x10~(17) B-at/cm~2 at 40 keV. Comparisons are made between Ti6Al4V with a shallow implanted boron depth profile, Ti6Al4V with a deeper boron depth profile and nitrogen implanted using a plasma source ion implantation process. It has been previously shown that while boron implanted Ti64 has a approx 30
机译:以前的研究将使用含有束源离子源离子浸渍工艺和使用束线的硼植入硼植入的Ti6Al4V的力学性能[1]。虽然氮气植入的Ti6Al4V具有优异的耐磨性,但是,如果在较低的能量下植入硼,硼植入的Ti6Al4V的耐磨性可能改善为可比较的水平,以增加表面硼的浓度。 Ti6Al4V的硼植入已在32和40keV的组合中进行,以补充先前在75 keV下进行的。通过定制离子能量和剂量的组合,已经获得了Ti64表面较高的B浓度的较浅的硼深度曲线。这项工作使用了三种不同的离子能量和4×10〜(17)B-AT / cm〜2的剂量组合,在40keV加2x10〜2,在32keV,4x10〜(17)B- AT / cm〜2。在40KeV的40KeV下在/ cm〜2,4×10〜(17)B-AT / cm〜2,在32keV加2x10〜(17)B-AT / cm〜2,40keV。在Ti6Al4V与浅植入的硼深度分布之间进行比较,Ti6Al4V具有更深的硼深度曲线和使用等离子体源离子注入工艺植入氮气。先前已经表明,虽然硼植入的Ti64有大约30

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