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Cesium-enhanced R. F. magnetron deposition of carbon nitride and diamond-like carbon films

机译:铯增强的R. F.磁控沉积氮化物和金刚石状碳膜

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We report the design, manufacturing, and testing of a new cesium enhanced negative carbon ion source that can be useful to synthesize hard and/or electron emitting carbon nitride and diamond-like carbon (DLC) thin films. The design of the source includes a conventional magnetron-sputtering gun, low voltage ion extraction lenses, and a cesium oven to provide cesium vapor for formation of a fractional monolayer of Cs on the carbon target. Cs reduces the surface work function of the carbon target and enhances the emission of negative carbon ions. Argon and argon-nitrogen gas mixtures were used to ignite and sustain the plasma in the chamber. We compare the properties of carbon nitride and DLC films deposited with and without cesium. Nitrogen composition in the Ar-N_2 gas mixture was observed to be an important process parameter affecting mechanical properties of the film. The effect of the Cs oven temperature on deposition rate and current absorbed at the substrate was also investigated for RF powers from 0 to 150 W.
机译:我们报告了新的铯增强的负碳离子源的设计,制造和测试,其可用于合成硬和/或电子发射碳氮化物和金刚石状碳(DLC)薄膜的用途。源的设计包括常规磁控管溅射枪,低压离子提取透镜,并且烘箱中,形成Cs的对碳靶的分数单层提供铯蒸气的铯。 CS降低了碳靶的表面作用功能,增强了负碳离子的发射。使用氩气和氩气氮气混合物来点燃和维持腔室中的等离子体。我们比较沉积有和不含铯的氮化碳和DLC膜的性质。观察到Ar-N_2气体混合物中的氮组合物是影响膜的机械性能的重要过程参数。 CS烘箱温度对基板上吸收的沉积速率和电流的影响也研究了0至150W的RF功率。

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