High frequency capacitance measurements on metal-insulator-semiconductor structures in thermal non-equilibrium condition

摘要

We simulate the charge carrier traffic between the energy bands and the interface states in structures like Al/SiO_2/6H-SiC, Al/diamond/SI and alSIPOS/Si to explain their hgh frequency capacitance-voltage behavior. The structures have in common that traditional electrical measurement techniques performed at room temperature are strongly influenced by non-equilibrium carrier conditions at the insulator-semiconductor interface. This can rsult in large errors in the interface data extracted from such studies when thermal equilibrium conditions are assumed. In this work, high frequency capacitance-voltage data are compared to numerical simulations which include such thermal non-equilibrium conditions to enable more accurate estimates of inteface state parameters in such structures.