Production-worthy shallow junction formation for sub-micron technologies using electron-volt ion implantation in the applied materials xR LEAP/sup TM/

摘要

The Applied Materials xR LEAP implanter has been used, in combination with rapid thermal annealing in the RTP Centura, to demonstrate ultra-shallow junction (USJ) profiles suitable for 0.25, 0.18 and 0.13 /spl mu/m device applications. The data is discussed in terms of the mechanisms during implant and anneal, and the various process methods available to control them. Data is presented illustrating the production-worthiness of the tool, and productivity for the implants is calculated. New improvements on the system are also described, to deliver a constant productivity road-map for sequential device generations.