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Effect of a photo-crosslinkable chemisorbed monolayer on thermal nanoimprinting of a poly(styrene) thin film on a gold substrate

机译:光交联的化学型单层对金基质上聚(苯乙烯)薄膜热纳米压印的影响

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A positive-type photoresist is used preferably for preparing a metal wiring circuit board in a subtractive method, because of facile removal of its residual layer from a metal surface by multiple rinses with an organic solvent after aqueous wet etching of metal. The photoresist is basically composed of a photodegradable polymer with polar functional groups. Therefore, a thin layer of the photoresist easily swells on its immersion in an aqueous etchant. The swell often causes the aqueous etchant to spread into an interface between metal and photoresist surfaces. The situation prevents us from fabricating reliably a metal pattern with a smaller width than 1μm by wet etching. Even if a non-polar hydrophobic polymer layer is used as an alternate resist layer, poor adhesion to a metal surface prevents from its pattern formation by thermal nanoimprinting.
机译:优选地使用正型光致抗蚀剂以使金属布线电路板制备在减法法中,因为在金属的水性湿法蚀刻水溶液后,通过多个冲洗,通过多个冲锡从金属表面移除其残余层。光致抗蚀剂基本上由具有极性官能团的可光降解的聚合物组成。因此,光致抗蚀剂的薄层容易溶胀在水溶液中的浸入水溶液中。膨胀通常导致水蚀刻剂涂布成金属和光致抗蚀剂表面之间的界面。这种情况防止了我们通过湿法蚀刻可靠地制造具有小于1μm的金属图案。即使非极性疏水性聚合物层用作交替抗蚀剂层,对于对金属表面的粘附性不良,可防止通过热纳米压印的图案形成。

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