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Fabrication of photonic crystal-patterned light emitting diodes using nanoimprint lithography

机译:使用纳米压印光刻制备光子晶体图案的发光二极管

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摘要

Recently, a two-dimensional (2D) photonic crystal pattern has become more important to enhance the light extraction efficiency of light emitting diodes (LEDs) [1]. However, it is difficult to realize the photonic crystal-patterned LED, which is made by e-beam lithography (EBL) [2] or laser interference lithography (LIL) [3], due to its expensiveness and time-consuming fabrication processes. In this work, we report the economical and effective fabrication process of photonic crystal patterns on GaN-based LED structures using nanoimprint lithography (NIL) and inductively coupled plasma (ICP) etching process.
机译:最近,二维(2D)光子晶体图案变得更加重要,以提高发光二极管(LED)的光提取效率[1]。然而,难以实现光子晶体图案的LED,其由电子束光刻(EBL)[2]或激光干扰光刻(LIL)[3],由于其耗费和耗时的制造工艺。在这项工作中,我们使用纳米压印光刻(NIL)和电感耦合等离子体(ICP)蚀刻工艺报告了GaN基LED结构上的光子晶体图案的经济性和有效制造过程。

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