X-and gamma-ray N↑(+)PP↑(+) silicon detectors with high radiation resistance

摘要

The paper describes some results concerning technology and behaviour of X-and gamma-ray N ↑(+)PP ↑(+) silicon detectors used in physics research, industrial and medical radiography and non-destructive testing. These detectors work at the room-temperature and can be used individually to detect X-and soft gamma-rays, or coupled with scintillators for higher incoming energies. Electrical characteristics of these photodiodes, their modification after exposure to radiation and results of spectroscopic X-and gamma-ray measurements are discussed. Devices manufactured under this technology proved to be stable after an exposure in high intensity gamma field with the dose range of l0 krad-5 Mrad. Nuclear radiation resistance was studied by irradiation with ↑(60) Co gamma source (1.17, 1.33 MeV) at dose rates of 59 kraal/hour and 570 krad/hour. Results indicate that proposed structures enable the development of reliable silicon detectors to be used in a high gamma-radiation environments encountered in a lot of applications.