CONSTRUCTION OF SOLID/SOLID INTERFACE MODELS USING MODULAR CHEMISTRY: THE Si/SiO_2 INTERFACE

摘要

Elucidating the structure and reactivity of solid-solid interfaces remains a conundrum for scientists. The interfaces, exhibiting both dramatic and subtle structural differences from the bulk solids, frequently exist over a very small region which leaves little sample available to analyze. Modular chemistry approaches have an important role to play in gaining an understanding of solid-solid interfaces. By using modular pieces to construct one or both sides of the interface, a spectroscopically amenable, well-defined interface can be generated. A series of experiments using this method will be presented for the case of the Si/SiO2 interface, a critical component of MOSFET devices (Metal Oxide Semiconductor Field Effect Transistor). Specifically, it will be shown how model interfaces constructed from spherosiloxane clusters such as H8Si8012 and Si(100)-2xl have facilitated the interpretation of core-level photoemission studies of the interface, furthered understanding of the structural implications of the photoemission experiments, and provided insight into the reactions of hydrogen, a major contributor to device failure at the interface.